- High power gain
- Easy power control
- Good thermal stability
- Gold metallization ensures excellent reliability
BLF278 300W FM
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Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT262A1 balanced flange package with two ceramic caps. The mounting flange provides the common source connection for the transistors.
Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
---|---|---|---|---|---|---|
frange | frequency range | 50 | 225 | MHz | ||
PL(1dB) | nominal output power at 1 dB gain compression | 300 | W | |||
Test signal: CW | ||||||
PL | output power | [0] | 250 | W | ||
Gp | power gain | VDS = 50 V; PL = 250 W [0] | 14 | 16 | dB | |
ηD | drain efficiency | VDS = 50 V; f = 225 MHz; IDq = 500 mA; PL = 250 W [0] | 50 | 55 | % |