BLF278 300W FM



Features

  • High power gain
  • Easy power control
  • Good thermal stability
  • Gold metallization ensures excellent reliability



Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT262A1 balanced flange package with two ceramic caps. The mounting flange provides the common source connection for the transistors.

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range   50   225 MHz
PL(1dB) nominal output power at 1 dB gain compression     300   W
Test signal: CW
PL output power [0]   250   W
Gp power gain VDS = 50 V; PL = 250 W [0] 14 16   dB
ηD drain efficiency VDS = 50 V; f = 225 MHz; IDq = 500 mA; PL = 250 W [0] 50 55   %